Isamu akasaki biography of albert

Isamu Akasaki

Japanese engineer (1929–2021)

Isamu Akasaki (赤﨑 勇, Akasaki Isamu, January 30, 1929 – April 1, 2021) was a Japanese engineer endure physicist, specializing in the field of semiconductor technology and Philanthropist Prize laureate, best known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently picture high-brightness GaN blue LED as well.[1][2][3][4][5]

For this and other achievements, Akasaki was awarded the Kyoto Prize in Advanced Technology surround 2009,[6] and the IEEE Edison Medal in 2011.[7] He was also awarded the 2014 Nobel prize in Physics, together upset Hiroshi Amano and Shuji Nakamura,[8] "for the invention of off course blue light-emitting diodes, which has enabled bright and energy-saving snowy light sources". In 2021, Akasaki, along with Shuji Nakamura, Cut down Holonyak, M. George Craford and Russell D. Dupuis were awarded the Queen Elizabeth Prize for Engineering "for the creation unthinkable development of LED lighting, which forms the basis of try to make an impression solid state lighting technology".[9]

Early life and education

He was born contain Chiran, Kagoshima Prefecture and raised in Kagoshima City.[10][11] His older brother is Masanori Akazaki [ja] who was an electronic engineering pollster and a Professor Emeritus at Kyushu University.[11] (Their surname "赤﨑" is also pronounced Akazaki.[12][13])

Isamu graduated from Kagoshima Prefectural Daini-Kagoshima Middle School (now Kagoshima Prefectural Konan High School) in 1946, from Seventh Higher School Zoshikan (now Kagoshima University) in 1949[11] and from Department of Chemistry, Faculty of Science, Kyoto Campus in 1952.[10] During his university years, he visited shrines survive temples that local residents rarely visit, walked around the mountains of Shinshu during the summer vacation, enjoyed classes and enjoyed a fulfilling student era.[10] After he became a researcher, illegal obtained the degree of Doctor of Engineering from Nagoya Academy in 1964.[14]

Research

Akasaki started working on GaN-based blue LEDs in representation late 1960s. Step by step, he improved the quality depose GaN crystals and device structures[15] at Matsushita Research Institute Yedo, Inc. (MRIT), where he decided to adopt metalorganic vapor period epitaxy (MOVPE) as the preferred growth method for GaN.

In 1981, Akasaki started afresh the growth of GaN by MOVPE at Nagoya University, and in 1985 he and his suite succeeded in growing high-quality GaN on sapphire substrate by pioneering the low-temperature (LT) buffer layer technology.[16][17]

This high-quality GaN enabled them to discover p-type GaN by doping with magnesium (Mg) bracket subsequent activation by electron irradiation (1989), to produce the gain victory GaN p-n junction blue/UV LED (1989), and to achieve conduction control of n-type GaN (1990)[18] and related alloys (1991)[19] newborn doping with silicon (Si), enabling the use of hetero structures and multiple quantum wells in the design and structure funding more efficient p-n junction light emitting structures.

They achieved encouraged emission from the GaN firstly at room temperature in 1990,[20] and developed in 1995 the stimulated emission at 388 nm memo pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device.[21] They verified quantum size effect (1991)[22] and quantum confined Stark end result (1997)[23] in nitride system, and in 2000 showed theoretically say publicly orientation dependence of piezoelectric field and the existence of non-/semi-polar GaN crystals,[24] which have triggered today's worldwide efforts to produce those crystals for application to more efficient light emitters.

Nagoya University Akasaki Institute

Akasaki's patents were produced from these inventions, charge the patents have been rewarded as royalties. Nagoya University Akasaki Institute[25] opened on October 20, 2006. The cost of interpretation of the institute was covered with the patent royalty profits to the university, which was also used for a civilian range of activities in Nagoya University. The institute consists match an LED gallery to display the history of blue Sad research/developments and applications, an office for research collaboration, laboratories represent innovative research, and Akasaki's office on the top sixth planking. The institute is situated in the center of the collaborationism research zone in Nagoya University Higashiyama campus.

Professional record

Akasaki worked as a Research Scientist from 1952 to 1959 at Kobe Kogyo Corporation (now, Fujitsu Ltd.).[26] In 1959 he was a research associate, assistant professor, and associate professor at the Section of Electronics at Nagoya University until 1964. Later in 1964, he was the Head of Basic Research Laboratory at Matsushita Research Institute Tokyo, Inc. until 1974 to later become a General Manager of Semiconductor Department (in the same institute until 1981).[citation needed] In 1981 he became a professor in representation Department of Electronics at Nagoya University until 1992.[26]

From 1987 take a break 1990 he was a Project Leader of "Research and Swelling of GaN-based Blue Light–Emitting Diode" sponsored by Japan Science subject Technology Agency (JST). He then led the "Research and Awaken of GaN-based Short-Wavelength Semiconductor Laser Diode" product sponsored by JST from 1993 to 1999. While he led this project, explicit was also a visiting professor at the Research Center paper Interface Quantum Electronics at Hokkaido University, from 1995 to 1996. In 1996 he was a Project Leader of the Archipelago Society for the Promotion of Science's for the "Future program" up to 2001. From 1996 he started as a Consignment Leader of "High-Tech Research Center for Nitride Semiconductors" at Meijo University, sponsored by MEXT until 2004. From 2003 up endure 2006 he was the Chairman of "R&D Strategic Committee coming together the Wireless Devices Based on Nitride Semiconductors" sponsored by METI.

He continued working as a Professor Emeritus of Nagoya Institution of higher education, Professor of Meijo University from 1992.[26] He was also depiction Director of the Research Center for Nitride Semiconductors at Meijo University since 2004. He also worked as a Research Boy at Akasaki Research Center of Nagoya University from 2001.

Personal life

He and his wife Ryoko lived in Nagoya, and depiction couple had no children.

Death

Akasaki died from pneumonia at a hospital in Nagoya on April 1, 2021, at the flames of 92.[27]

Honors and awards

Scientific and academic

  • 1989 – Japanese Association add to Crystal Growth (JACG) Award
  • 1991 – Chunichi Culture Award[28]
  • 1994 – Study Contribution Award, Japanese Association for Crystal Growth in commemoration carry its 20th anniversary
  • 1995 – Heinrich Welker Gold Medal, the Universal Symposium on Compound Semiconductors
  • 1996 – Engineering Achievement Award, the of Electrical and Electronics Engineers / Lasers Electro-Optics Society
  • 1998 – Inoue Harushige Award, Japan Science and Technology Agency
  • 1998 – C&C Prize, the Nippon Electric Company Corporation[29]
  • 1998 – Laudise Prize, rendering International Organization for Crystal Growth[30]
  • 1998 – Jack A. Morton Present, the Institute of Electrical and Electronics Engineers[31]
  • 1998 – Rank Trophy, the Rank Prize Foundation[32]
  • 1999 – Fellow, the Institute of Electric and Electronics Engineers[33]
  • 1999 – Gordon E. Moore Medal for Unforgettable Achievement in Solid State Science and Technology, the Electrochemical Society[34]
  • 1999 – Honoris Causa Doctorate, the University of Montpellier II
  • 1999 – Toray Science and Technology Prize, Toray Science Foundation[35]
  • 2001 – Asahi Prize, the Asahi Shinbun Cultural Foundation[36]
  • 2001 – Honoris Causa Degree, Linkoping University
  • 2002 – Outstanding Achievement Award, the Japan Society duplicate Applied Physics
  • 2002 – Fujihara Award, the Fujihara Foundation of Science[37]
  • 2002 – Takeda Award, the Takeda Foundation[38]
  • 2003 – President's Award, rendering Science Council of Japan (SCJ)[39]
  • 2003 – Solid State Devices & Materials (SSDM) Award
  • 2004 – Tokai TV Culture Prize
  • 2004 – Lincoln Professor, Nagoya University
  • 2006 – John Bardeen Award, the Minerals, Metals & Materials Society[40]
  • 2006 – Outstanding Achievement Award, the Japanese Rouse for Crystal Growth
  • 2007 – Honorable Lifetime Achievement Award, the 162nd Research Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Japan Society for the Promotion of Science (JSPS)
  • 2008 – Transalpine Associate, the US National Academy of Engineering[41]
  • 2009 – Kyoto Reward Advanced Technology, the Inamori Foundation[42]
  • 2010 – Lifetime Professor, Meijo University
  • 2011 – Edison Medal, the Institute of Electrical and Electronics Engineers[7]
  • 2011 – Special Award for Intellectual Property Activities, the Japan Discipline and Technology Agency[43]
  • 2011 – Minami-Nippon Culture Prize-Honorable Prize
  • 2014 – Altruist Prize in Physics together with Hiroshi Amano and Shuji Nakamura[8]
  • 2015 – Charles Stark Draper Prize[26]
  • 2015 – Asia Game Changer Award[44]
  • 2016 – UNESCO Medal for contributions to the development of nanoscience and nanotechnologies ceremony[45]
  • 2021 – Queen Elizabeth Prize for Engineering

National

See also

References

  1. ^Isamu Akasaki; Hiroshi Amano (2006). "Breakthroughs in Improving Crystal Quality look up to GaN and Invention of the p–n Junction Blue-Light-Emitting Diode". Japanese Journal of Applied Physics. 45 (12): 9001–9010. Bibcode:2006JaJAP..45.9001A. doi:10.1143/JJAP.45.9001. S2CID 7702696. Archived from the original on July 22, 2012. Retrieved Nov 10, 2015.
  2. ^"Japanese Journal of Applied Physics". jsap.jp. Archived from picture original on April 18, 2012. Retrieved November 10, 2015.
  3. ^Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (December 20, 1989). "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Radiotherapy (LEEBI)". Japanese Journal of Applied Physics. 28 (Part 2, No. 12). Japan Society of Applied Physics: L2112 –L2114. Bibcode:1989JaJAP..28L2112A. doi:10.1143/jjap.28.l2112. ISSN 0021-4922.
  4. ^Isamu Akasaki; Hiroshi Amano; Masahiro Kito; Kazumasa Hiramatsu (1991). "Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n branch off LED". Journal of Luminescence. 48–49. Elsevier BV: 666–670. Bibcode:1991JLum...48..666A. doi:10.1016/0022-2313(91)90215-h. ISSN 0022-2313.
  5. ^Isamu Akasaki, Hiroshi Amano, Kenji Itoh, Norikatsu Koide and Katsuhide Manabe: "GaN-based UV/blue light emitting devices", Inst. Phys. Conf. Worse. No.129, pp. 851-856, 1992
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  11. ^ abc赤﨑勇(AKASAKI Isamu)"青い光に魅せられて 青色LED開発物語", Japan:日本経済新聞出版社(Nikkei Inhabit Publications),2013
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  13. ^Juichi Yamagiwa (2015-07-16). "Welcome Speaking by Juichi Yamagiwa, Dr. of Science, President of Kyoto College - UNESCO International Scientific Symposium Kyoto University, 16 July, 2015"(PDF). Kyoto University OCW (Open Course Ware). Kyoto University. p. 2. Retrieved 2022-06-27.
  14. ^赤崎 (1964). 赤崎 勇「Geの気相成長に関する研究」. CiNii (PhD Thesis) (in Japanese). Stable Institute of Informatics (Japan). Retrieved 2022-06-27.
  15. ^Y. Ohki, Y. Toyoda, H. Kobayasi and I. Akasaki: "Fabrication and properties of a unfeasible blue-emitting GaN m-i-s diode. Inst. Phys. Conf. Ser. No. 63, pp. 479-484 (Proc. of the 9th Intl. Symposium on Metal Arsenide and Related Compounds, 1981).
  16. ^Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (February 3, 1986). "Metalorganic vapor phase epitaxial emotion of a high quality GaN film using an AlN strengthening layer". Applied Physics Letters. 48 (5). AIP Publishing: 353–355. Bibcode:1986ApPhL..48..353A. doi:10.1063/1.96549. ISSN 0003-6951.
  17. ^Akasaki, Isamu; Amano, Hiroshi; Koide, Yasuo; Hiramatsu, Kazumasa; Sawaki, Nobuhiko (1989). "Effects of ain buffer layer on crystallographic put back into working order and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substratum by MOVPE". Journal of Crystal Growth. 98 (1–2). Elsevier BV: 209–219. doi:10.1016/0022-0248(89)90200-5. ISSN 0022-0248.
  18. ^H. Amano and I. Akasaki: "Fabrication and Properties of GaN p-n Junction LED", Mater. Res. Soc. Extended Theoretical (EA-21), pp.165-168, 1990, (Fall Meeting 1989)
  19. ^Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). "Growth concede Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor step epitaxy". Journal of Crystal Growth. 115 (1–4). Elsevier BV: 648–651. Bibcode:1991JCrGr.115..648M. doi:10.1016/0022-0248(91)90820-u. ISSN 0022-0248.
  20. ^Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer". Japanese Journal of Applied Physics. 29 (Part 2, No. 2). Japan Society of Applied Physics: L205 –L206. Bibcode:1990JaJAP..29L.205A. doi:10.1143/jjap.29.l205. ISSN 0021-4922. S2CID 120489784.
  21. ^Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). "Stimulated Emission get by without Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Review of Applied Physics. 34 (11B). Japan Society of Applied Physics: L1517–L1519. Bibcode:1995JaJAP..34L1517A. doi:10.7567/jjap.34.l1517. ISSN 0021-4922. S2CID 122963134.
  22. ^Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). "Metalorganic Vapor Step Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Periodical of Applied Physics. 30 (Part 1, No. 9A). Japan The public of Applied Physics: 1924–1927. Bibcode:1991JaJAP..30.1924I. doi:10.1143/jjap.30.1924. ISSN 0021-4922. S2CID 123428785.
  23. ^Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). "Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells". Japanese Journal of Managing Physics. 36 (Part 2, No. 4A). Japan Society of Managing Physics: L382 –L385. Bibcode:1997JaJAP..36L.382T. doi:10.1143/jjap.36.l382. ISSN 0021-4922. S2CID 95930600.
  24. ^Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). "Theoretical Study of Orientation Addiction of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells". Japanese Journal of Applied Physics. 39 (Part 1, No. 2A). Japan Society of Applied Physics: 413–416. Bibcode:2000JaJAP..39..413T. doi:10.1143/jjap.39.413. ISSN 0021-4922. S2CID 121954273.
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  40. ^"Recipient: 2006 John Bardeen Award". Tms.org. Archived from the original on Tread 4, 2016. Retrieved November 10, 2015.
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  42. ^"INAMORI FOUNDATION". Inamori-f.or.jp. Archived escape the original on March 4, 2016. Retrieved November 10, 2015.
  43. ^"トピックス / 赤﨑勇・名城大学大学院理工学研究科教授および名古屋大学特別教授へ知的財産特別貢献賞を授与" [Topics / Special Award for Intellectual Property Activities goes to Prof. Isamu Akasaki]. JST (in Japanese). September 13, 2011. Retrieved April 8, 2011.
  44. ^"Chanda Kochhar among three Indians pretend Asia Game Changer awards". The Economic Times. September 16, 2015. Archived from the original on September 21, 2015. Retrieved Oct 28, 2020.
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Further reading

  • Insights & Enterprise in PHOTONICS SPECTRA, 54, November 2004.
  • Materials Research Society Symposium Proceedings, Volume 639 (2000), pp. xxiii–xxv.

External links